(China (Mainland))
Product Summary
The FZT458TA is an NPN silicon planar high voltage transistor.
Parametrics
FZT458TA absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 400 V; (2)Collector-Emitter Voltage, VCEO: 400 V; (3)Emitter-Base Voltage, VEBO: 5 V; (4)Continuous Collector Current, IC: 300 mA; (5)Peak Pulse Current, ICM: 1 A; (6)Base Current, IB: 200 mA; (7)Power Dissipation at Tamb= 25℃, Ptot: 2 W; (8)Operating and Storage Temperature Range, Tj, Tstg: -55 to +150℃.
Features
FZT458TA features: (1)400 Volt VCEO; (2)PARTMARKING DETAIL-FZT458.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FZT458TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Voltage |
Data Sheet |
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FZT4403 |
Other |
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Data Sheet |
Negotiable |
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FZT4403TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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FZT4403TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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FZT458 |
Other |
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Data Sheet |
Negotiable |
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FZT458TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Voltage |
Data Sheet |
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FZT458TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) NPN High Voltage |
Data Sheet |
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