Product Summary

The DS1225Y-150+ is a 65,536–bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. The DS1225Y-150+ can be used in place of existing 8K × 8 SRAMs directly conforming to the popular bytewide 28–pin DIP standard. The DS1225Y-150+ also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance.

Parametrics

DS1225Y-150+ absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃; -40℃ to +85℃ for IND parts; (3)Storage Temperature: -40℃ to +70℃; -40℃ to +85℃ for IND parts; (4)Soldering Temperature: 260℃ for 10 seconds.

Features

DS1225Y-150+ features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Directly replaces 8K × 8 volatile static RAM or EEPROM; (4)Unlimited write cycles; (5)Low-power CMOS; (6)JEDEC standard 28-pin DIP package; (7)Read and write access times as fast as 150 ns; (8)Full ±10% operating range; (9)Optional industrial temperature range of -40℃ to +85℃, designated IND.

Diagrams

DS1225Y-150+ block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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DS1225Y-150+
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